An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Scalability of Multifinger HEMT Performance

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Nonlinear-embedding design methodology oriented to LDMOS power amplifiers

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology

Current-gain in FETs beyond cut-off frequency

Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs

A procedure for the extraction of a nonlinear microwave GaN FET model

Waveform engineering: State-of-the-art and future trends (invited paper)

A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification

Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Empowering GaN HEMT models: The gateway for power amplifier design

A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique

Behavioral Modeling of GaN FETs: a Load-Line Approach

X-Band GaN Power Amplifier for Future Generation SAR Systems

Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique

Nonlinear modeling of LDMOS transistors for high-power FM transmitters